Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP

Rare earth activated luminescence in InP, GaP and GaAs

H. Ennen, U. Kaufmann, Gernot S. Pomrenke et al. · Journal of Crystal Growth · 1983 · 77 citations

Photoluminescence, Engineering, Physics +4

Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasers

W. T. Tsang, R. A. Logan · Applied Physics Letters · 1986 · 74 citations

Optical Materials, Engineering, Laser Science +19

Erbium doping of molecular beam epitaxial GaAs

Robin S. Smith, H. Müller, H. Ennen et al. · Applied Physics Letters · 1987 · 72 citations · Full text

Semiconductors, Room Temperature, Electrical Engineering +15

Rare earth ions in LPE III-V semiconductors

W. Körber, J. Weber, A. Hangleiter et al. · Journal of Crystal Growth · 1986 · 66 citations

Semiconductors, Lpe Iii-v Semiconductors, Engineering +3

Yb-doped InP grown by metalorganic chemical vapor deposition

Kunihiko Uwai, H. Nakagome, Kenichiro Takahei · Applied Physics Letters · 1987 · 65 citations

Materials Science, Semiconductors, Epitaxial Growth +13