W. Körber

Ytterbium-doped InP light-emitting diode at 1.0 μm

W.H. Haydl, H. Müller, H. Ennen et al. · Applied Physics Letters · 1985 · 67 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Rare earth ions in LPE III-V semiconductors

W. Körber, J. Weber, A. Hangleiter et al. · Journal of Crystal Growth · 1986 · 66 citations

Semiconductors, Lpe Iii-v Semiconductors, Engineering +3

Excitation and decay mechanisms of the intra-4<i>f</i> luminescence of Yb3+ in epitaxial InP:Yb layers

W. Körber, A. Hangleiter · Applied Physics Letters · 1988 · 65 citations

Epitaxial Growth, Photoluminescence, Engineering +15

High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s

W. Kuebart, J.-H. Reemtsma, D. Kaiser et al. · IEEE Transactions on Microwave Theory and Techniques · 1995 · 25 citations

Electrical Engineering, Inp-based Pin-hemt Receiver-oeic, Engineering +14

MOVPE of In(GaAs)P/InGaAs MQW structures

P. Wiedemann, M. Klenk, W. Körber et al. · Journal of Crystal Growth · 1991 · 16 citations

Electrical Engineering, Engineering, Applied Physics +2