Peter Whitney

Intra-4<i>f</i>-shell luminescence excitation and quenching mechanism of Yb in InP

K. Takahei, Atsushi Taguchi, H. Nakagome et al. · Journal of Applied Physics · 1989 · 117 citations

Localized Excited State, Engineering, Crystal Growth Technology +17

Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Applied Physics Letters · 1988 · 106 citations

Engineering, Ytterbium Impurities, Electrical Properties +17

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Electronics Letters · 1988 · 48 citations

Temperature dependence of intra-4<i>f</i>-shell photo- and electroluminescence spectra for erbium-doped GaAs

Kenichiro Takahei, Peter Whitney, H. Nakagome et al. · Journal of Applied Physics · 1989 · 41 citations

Optical Materials, Engineering, Temperature Dependence +17

Capacitance transient analysis of molecular-beam epitaxial <i>n</i>-In0.53Ga0.47As and <i>n</i>-In0.52Al0.48 As

Peter Whitney, Wai Lee, Clifton G. Fonstad · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 38 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13