Applied Physics Letters · 1982 · 88 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsSemiconductor Crystal GrowthSemiconductor Device MaterialsSilicon MaterialsAmorphous SiliconAnnealingBeam Spot SizeHeavy Ion RadiationIon Beam IrradiationRecrystallizationScan SpeedTetrahedral Interstitial Sites
An entirely new beam annealing method that employs a high-energy (∼2.5 MeV) heavy ion (As75, Kr84) beam is presented. With this technology, an amorphous Si layer is recrystallized at below ∼300 °C substrate temperature (much lower than the ordinary solid phase epitaxial growth temperature of ∼600 °C). The temperature just under the beam spot is estimated to be at most ∼20° C higher than that in the surrounding region, because of the large beam spot size (∼10 mmφ) and rapid scan speed (∼104 cm/s). This low-temperature annealing feature is quite different from the case for conventional furnace, laser, electron, and low-energy ion beam annealing. After recrystallization, impurity As atoms are located at substitutional sites with no tetrahedral interstitial components, and are scarcely redistributed.
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Ion beam annealing of semiconductors
R. T. Hodgson, J. E. E. Baglin, Rikathi Pal et al. · Applied Physics Letters · 1980 · 106 citations