Electronics Letters · 2006 · 39 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportElectron TransportHigh-frequency Semiconductor DevicesSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageCurrent DensityGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-electron-mobility TransistorsHigh-frequency Electronics
DC and RF measurements of an emerging AlInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in spite of a basic technology which provides high access resistances, high frequency performances with a cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, at VDS=10 V were achieved. A maximum drain current density more than 1.3 A/mm with a pinch-off breakdown voltage about 40 V without any passivation was obtained. These results show that this device is very promising for high power performances at high frequency.
9
30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations