J.‐F. Carlin - Concepedia

Author

J.‐F. Carlin

École Polytechnique Fédérale de Lausanne

Also Known As

Carlin, J-F. (J.-F), Carlin, J. -F., Carlin, J.F., Carlin, Jean-Francois, E. FELTIN, J-F Carlin, J-F. Carlin, J. -F. Carlin, J. F. Carlin, J.-F. Carlin

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne TU Wien Institute of Electrical Engineering of the Slovak Academy of Sciences Slovak Academy of Sciences Exalos (Switzerland)

About

J.‐F. Carlin is an author at École Polytechnique Fédérale de Lausanne specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	18	1K
2	Applied Physics	14	17	961
3	Electrical Engineering	11	12	709
4	Chemical Engineering	1	1	11
5	Materials Engineering	1	1	14

J.‐F. Carlin

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN J.‐F. Carlin, M. Ilegems Applied Physics Letters Materials SciencePhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	260
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials J.‐F. Carlin, Christoph Zellweger, J. Dorsaz, physica status solidi (b) Materials SciencePhotonicsElectrical EngineeringOptical MaterialsEngineering	2005	153
Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications Jx Chen, A. Markus, Andrea Fiore, Journal of Applied Physics Optical MaterialsQuantum PhotonicsEngineeringOptoelectronic DevicesμM Applications	2002	104
Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals M. Rattier, H. Benisty, R. P. Stanley, IEEE Journal of Selected Topics in Quantum Electronics EngineeringMode ExtractionMicro-optical ComponentPhotonic CrystalsInjection Scheme	2002	77
MOCVD of HfO<sub>2</sub> and ZrO<sub>2</sub> high-<i>k</i> gate dielectrics for InAlN/AlN/GaN MOS-HEMTs S. Abermann, G. Pozzovivo, J. Kuzmı́k, Semiconductor Science and Technology	2007	75
Broadband blue superluminescent light-emitting diodes based on GaN E. Feltin, Antonino Castiglia, Gatien Cosendey, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingGan Substrates	2009	73
Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser M. Brunner, K. Gulden, R. Hövel, IEEE Photonics Technology Letters PhotonicsGrown CavitiesEngineeringLaser ScienceCavity Qed	2000	48
Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers E. Feltin, R. Butté, J.‐F. Carlin, Electronics Letters PhotonicsEngineeringPhysicsOptical PropertiesBragg Reflectors	2005	47
The dual wavelength Bi-vertical cavity surface-emitting laser J.‐F. Carlin, R. P. Stanley, P. Pellandini, Applied Physics Letters PhotonicsEngineeringLaser ScienceOptical PropertiesVertical Cavities	1999	41
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K. Čičo, K. Hušeková, M. Ťapajna, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena SemiconductorsGate DielectricsElectrical EngineeringElectronic DevicesEngineering	2011	35

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