INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

Interfacial reactions between Ni films and GaAs

A. Lahav, M. Eizenberg, Y. Komem · Journal of Applied Physics · 1986 · 127 citations

Semiconductors, Materials Science, Electrical Engineering +15

Alloying reaction in thin nickel films deposited on GaAs

Masaki Ogawa · Thin Solid Films · 1980 · 105 citations

Materials Science, Engineering, Applied Physics +4

HEMT degradation in hydrogen gas

P.C. Chao, Ming-Yih Kao, Karen J. Nordheden et al. · IEEE Electron Device Letters · 1994 · 71 citations

Semiconductors, Semiconductor Technology, Chemical Engineering +14

Al–GaAs (001) Schottky barrier formation

Stefan P. Svensson, G. Landgren, T. G. Andersson · Journal of Applied Physics · 1983 · 48 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +17

Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs

H. Goronkin, S. Tehrani, T. Remmel et al. · IEEE Transactions on Electron Devices · 1989 · 44 citations

Materials Science, Aluminium Nitride, Electrical Engineering +11