F. Magistrali

Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers

Enrico Zanoni, S. Bigliardi, R. Capelletti et al. · IEEE Electron Device Letters · 1990 · 40 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

Metal–GaAs interaction and contact degradation in microwave MESFETs

Enrico Zanoni, Alessandro Callegari, Claudio Canali et al. · Quality and Reliability Engineering International · 1990 · 30 citations

Semiconductors, Metal‐gaas Interaction, Electrical Engineering +11

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices

C. Canali, F.M. Chiussi, Gianpaolo Donzelli et al. · Microelectronics Reliability · 1989 · 17 citations

Electrical Engineering, Engineering, Hardware Reliability +13

ESD induced degradation mechanisms of InGaAsP/InP lasers

F. Magistrali, D. Sala, G. Salmini et al. · Quality and Reliability Engineering International · 1992 · 16 citations

Photonics, Engineering, Laser-induced Breakdown +9

Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

C. Canali, Enrico Corti, B. Gabrielli et al. · IEEE Transactions on Electron Devices · 1990 · 15 citations

Electrical Engineering, G/sub M/, Engineering +14