T. G. Andersson

Optical properties of discontinuous gold films

S. Norrman, T. G. Andersson, Claes‐Göran Granqvist et al. · Physical review. B, Condensed matter · 1978 · 260 citations

Materials Science, Plasmonics, Optical Materials +10

Variation of the critical layer thickness with In content in strained In<i>x</i>Ga1−<i>x</i>As-GaAs quantum wells grown by molecular beam epitaxy

T. G. Andersson, Z. G. Chen, V. D. Kulakovskiĭ et al. · Applied Physics Letters · 1987 · 247 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Nature of native oxide on GaN surface and its reaction with Al

K. Prabhakaran, T. G. Andersson, Katsuhisa Nozawa · Applied Physics Letters · 1996 · 156 citations

Materials Science, Materials Engineering, Aluminium Nitride +12

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Ivan G. Ivanov, B. Ḿonemar, J.V. Thordson et al. · Journal of Applied Physics · 1998 · 84 citations

Semiconductors, Materials Science, Nitrogen Concentration +15

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

J. R. Söderström, E. R. Brown, C. D. Parker et al. · Applied Physics Letters · 1991 · 72 citations

Wide-bandgap Semiconductor, High-speed Inas/alsb Resonant, Electrical Engineering +14