J.V. Thordson

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Ivan G. Ivanov, B. Ḿonemar, J.V. Thordson et al. · Journal of Applied Physics · 1998 · 84 citations

Semiconductors, Materials Science, Nitrogen Concentration +15

Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials

G. Bösker, N. A. Stolwijk, J.V. Thordson et al. · Physical Review Letters · 1998 · 48 citations

Engineering, Chemistry, Semiconductors +16

Inverse parabolic quantum wells grown by molecular-beam epitaxy using digital and analog techniques

Weiqiu Chen, S. M. Wang, Thomas Andersson et al. · Physical review. B, Condensed matter · 1993 · 40 citations

Materials Science, Photonics, Large Stark Shift +15

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

P. O. Nilsson, J. Kanski, J.V. Thordson et al. · Physical review. B, Condensed matter · 1995 · 34 citations · Full text

Materials Science, Ii-vi Semiconductor, Electrical Engineering +15

Inverse parabolic quantum well and its quantum-confined Stark effect

W. Q. Chen, S. M. Wang, Thomas Andersson et al. · Journal of Applied Physics · 1993 · 23 citations

Materials Science, Quantum Science, Large Stark Shift +15