Concepedia

A. Lahav

AL

Statistics

Publications

12

Citations

511

H-Index

12

Active since

1984

Affiliations

Technion – Israel Institute of Technology(Current)

AT&T (United States)

A. Lahav is an author at Technion – Israel Institute of Technology specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceThin FilmsSemiconductorsSurface ScienceElectrical EngineeringPhysicsHigh Temperature MaterialsPhase Separation

Publications per year

1984–2011

12

Publications

12

Interfacial reactions between Ni films and GaAs

A. Lahav, M. Eizenberg, Y. Komem · Journal of Applied Physics · 1986 · 127 citations

Semiconductors, Materials Science, Electrical Engineering +15

Processing of photonic crystal nanocavity for quantum information in diamond

Igal Bayn, B. Meyler, A. Lahav et al. · Diamond and Related Materials · 2011 · 71 citations

Materials Science, Photonics, Quantum Science +10

Pt/Ti/<i>p</i>-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

A. Katz, W. C. Dautremont–Smith, S. N. G. Chu et al. · Applied Physics Letters · 1989 · 52 citations · Full text

Materials Science, Materials Engineering, Material Analysis +14

WSi<i>x</i> refractory metallization for GaAs metal–semiconductor field-effect transistors

A. Lahav, Changyu Wu, F. A. Baiocchi · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 49 citations

Semiconductors, Materials Science, Electrical Engineering +13

Measurement of thermal expansion coefficients of W, WSi, WN, and WSiN thin film metallizations

A. Lahav, K. A. Grim, Ilan A. Blech · Journal of Applied Physics · 1990 · 39 citations

Engineering, Refractory Gate, Thermal Expansion Coefficients +20

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