A. Lahav

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Publications

Citations

512

H-Index

Active since

1984

Affiliations

Technion – Israel Institute of Technology(Current)

AT&T (United States)

A. Lahav is an author at Technion – Israel Institute of Technology specializing in materials science, semiconductor materials, and semiconductor physics.

Publications per year

1984–2011

Publications

Interfacial reactions between Ni films and GaAs

A. Lahav, M. Eizenberg, Y. Komem · Journal of Applied Physics · 1986 · 127 citations

Engineering, Materials Engineering, Materials Science +17

Processing of photonic crystal nanocavity for quantum information in diamond

Igal Bayn, B. Meyler, A. Lahav et al. · Diamond and Related Materials · 2011 · 72 citations

Natural Sciences, Materials Science, Physics +14

Pt/Ti/<i>p</i>-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

A. Katz, W. C. Dautremont–Smith, S. N. G. Chu et al. · Applied Physics Letters · 1989 · 52 citations · Full text

Engineering, Materials Engineering, Materials Science +17

WSi<i>x</i> refractory metallization for GaAs metal–semiconductor field-effect transistors

A. Lahav, Changyu Wu, F. A. Baiocchi · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement of thermal expansion coefficients of W, WSi, WN, and WSiN thin film metallizations

A. Lahav, K. A. Grim, Ilan A. Blech · Journal of Applied Physics · 1990 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +17

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