IEEE Transactions on Electron Devices · 1989 · 44 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceContact AnalysisMetal-semiconductor ContactsSemiconductor InterfacesWide-bandgap SemiconductorsAlloyingAlloying EffectsContact FormationEnergy Dispersive X-ray SpectroscopyEnergy-dispersive X-ray SpectroscopyOhmic ConductionOhmic ContactsSemiconductor Alloying
Hypoeutectic AuGe/Ni ohmic contacts on GaAs and GaAs/AlGaAs were characterized by SEM, TEM, and energy dispersive X-ray analysis. The two main components of the contact were confirmed to be NiGeAs islands distributed in an Au-Ga alloy. The NiGeAs islands were larger and more evenly distributed on GaAs MESFETs than on GaAs/AlGaAs MODFETs. Vertical penetration was impeded but not halted by AlGaAs. Since the contacts did not melt during the alloying cycle, there was no lateral encroachment observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
8
Millimeter-wave low-noise high electron mobility transistors
P.C. Chao, S. C. Palmateer, P.M. Smith et al. · IEEE Electron Device Letters · 1985 · 56 citations