Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

Interface roughness scattering in GaAs/AlAs quantum wells

H. Sakaki, Takeshi Noda, Kazuhiko Hirakawa et al. · Applied Physics Letters · 1987 · 680 citations

Engineering, Electrical Engineering, Physics +17

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Engineering, Materials Science, Physics +17

Influence of misfit dislocations on the surface morphology of Si1−<i>x</i>Ge<i>x</i> films

M. A. Lutz, R. M. Feenstra, F. K. LeGoues et al. · Applied Physics Letters · 1995 · 166 citations

Natural Sciences, Materials Engineering, Materials Science +17

Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density

J. H. Li, Changsi Peng, Yue Wu et al. · Applied Physics Letters · 1997 · 94 citations

Engineering, Materials Engineering, Materials Science +14