Applied Physics Letters · 1995 · 166 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ScienceThin FilmsDislocation MechanicsDislocations In SemiconductorsSemiconductor SurfacesStrain EngineeringThin Film StrainThin Film Surface MorphologyAtomic Force Microscopy AnalysisDislocation BehaviorDislocation PhysicsDislocationsHatch PatternsMisfit DislocationsSurface StepsTransmission Electron Microscopy Of Dislocations
The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1−xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60° dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed.