Y. Shiraki - Concepedia

Author

Y. Shiraki

The University of Tokyo

Also Known As

S. Fukatsu, Shiraki Yasuhiro, Y Shiraki, Y. Shiraki, YASUHIRO SHIRAKI, Yasuhiro SHIRAKI, Yasuhiro Shiraki

544

Publications

9.9K

Citations

H-Index

116

Concepts

All Affiliations

The University of Tokyo Hitachi (Japan)Tohoku University Tokyo City University University of Yamanashi

About

Y. Shiraki is an author at The University of Tokyo specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	45	201	8.4K
2	Applied Physics	45	200	8.4K
3	Natural Sciences	10	10	225
4	Chemistry	9	9	243
5	Chemical Engineering	1	1	40

Y. Shiraki

207

Publications

8.6K

Citations

H-Index

Page 1

	Year	Citations
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE Akitoshi Ishizaka, Y. Shiraki Journal of The Electrochemical Society EngineeringMbe GrowthSilicon On InsulatorSemiconductorsSurface Technology	1986	1.6K
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells Koji Muraki, S. Fukatsu, Y. Shiraki, Applied Physics Letters SemiconductorsOptical MaterialsEngineeringPhotoluminescencePhysics	1992	480
Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy H. Sunamura, Noritaka Usami, Y. Shiraki, Applied Physics Letters Materials ScienceSemiconductorsIsland FormationPhotoluminescenceEngineering	1995	259
Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Applied Physics Letters Materials ScienceSemiconductorsGe Surface SegregationEngineeringPhysics	1991	217
Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties E. S. Kim, Noritaka Usami, Y. Shiraki Applied Physics Letters Optical MaterialsSelective Epitaxial GrowthEngineeringCrystal Growth TechnologyOptoelectronic Devices	1998	128
Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot S. Fukatsu, H. Sunamura, Y. Shiraki, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1997	124
Determination of quadratic nonlinear optical coefficient of Al<i>x</i>Ga1−<i>x</i>As system by the method of reflected second harmonics Makoto Ohashi, Takashi Kondo, R. Ito, Journal of Applied Physics PhotonicsOptical MaterialsEngineeringAl ContentPhysics	1993	107
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Arnold C. Alguno, Noritaka Usami, Toru Ujihara, Applied Physics Letters EngineeringOptoelectronic DevicesSelf-assembled Ge DotsPhotovoltaicsSemiconductor Nanostructures	2003	101
Metalorganic vapor phase epitaxy of GaP1−<i>x</i>N<i>x</i> alloys on GaP S Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Applied Physics Letters Materials ScienceMaterials EngineeringOptical MaterialsEngineeringPhotoluminescence	1993	98
Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures Toshifumi Irisawa, Shigeo Tokumitsu, Takanori Hattori, Applied Physics Letters Semiconductor TechnologyStrained Ge ChannelElectrical EngineeringEngineeringPhysics	2002	89

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