Y. Shiraki

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Akitoshi Ishizaka, Y. Shiraki · Journal of The Electrochemical Society · 1986 · 1.6K citations

Engineering, Materials Engineering, Materials Science +17

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki et al. · Applied Physics Letters · 1992 · 483 citations

Engineering, Materials Engineering, Materials Science +17

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

H. Sunamura, Noritaka Usami, Y. Shiraki et al. · Applied Physics Letters · 1995 · 259 citations

Engineering, Materials Engineering, Materials Science +16

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi et al. · Applied Physics Letters · 1991 · 217 citations

Engineering, Materials Engineering, Materials Science +17

MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

Kentaro Onabe, N. Ohkouchi, Hiroyuki Yaguchi et al. · Journal of Crystal Growth · 1992 · 143 citations

Engineering, Materials Engineering, Materials Science +12