Hiroyuki Yaguchi - Concepedia

Author

Hiroyuki Yaguchi

Also Known As

, Hiroyuki Yaguchi, H Yaguchi, H. YAGUCHI, H. Yaguchi, Hiroyaki Yaguchi, Hiroyuki YAGUCHI, Hiroyuki Yaguchi, Hiroyuki Yaguchi Hiroyuki Yaguchi, P Palungwachira, Tadashi SAITOH Hiroyuki YAGUCHI

332

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo Saitama University National Institute of Advanced Industrial Science and Technology Japan Science and Technology Agency Tohoku University

About

Hiroyuki Yaguchi is an author at The University of Tokyo specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	76	2.4K
2	Applied Physics	25	77	2.4K
3	Medicine	1	1	23
4	Chemical Engineering	1	1	48
5	Chemistry	1	1	12

Hiroyuki Yaguchi

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Applied Physics Letters Materials ScienceSemiconductorsGe Surface SegregationEngineeringPhysics	1991	217
MOVPE growth of cubic GaN on GaAs using dimethylhydrazine Kentaro Onabe, N. Ohkouchi, Hiroyuki Yaguchi Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsMovpe GrowthGan Power Device	1992	143
Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films Yasuto Hijikata, Hiroyuki Yaguchi, M. Yoshikawa, Applied Surface Science Materials ScienceComposition AnalysisSio2/sic InterfacesEngineeringOxide Electronics	2001	122
Metalorganic vapor phase epitaxy of GaP1−<i>x</i>N<i>x</i> alloys on GaP S Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Applied Physics Letters Materials ScienceMaterials EngineeringOptical MaterialsEngineeringPhotoluminescence	1993	98
A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida Applied Physics Express Materials EngineeringElectrical EngineeringEngineeringDerived Growth RatesSilicon Carbide Oxidation	2009	93
Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb Ken Fujita, S. Fukatsu, Hiroyuki Yaguchi, Japanese Journal of Applied Physics Ge Surface SegregationEngineeringMbe GrowthSilicon On InsulatorSemiconductor Nanostructures	1990	88
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringPhotoluminescence	1997	82
Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs Noriyuki Kuwano, Yoshiyuki Nagatomo, Kenki Kobayashi, Japanese Journal of Applied Physics Materials ScienceSemiconductorsAluminium NitrideWide-bandgap SemiconductorEngineering	1994	73
Naturally formed ZnCdSe quantum dots on ZnSe (110) surfaces B. P. Zhang, Takashi Yasuda, Yasutomo Segawa, Applied Physics Letters Materials ScienceIi-vi SemiconductorPhotoluminescenceZncdse Quantum DotsEngineering	1997	59
Optical Constants of Cubic GaN, AlN, and AlGaN Alloys Takanobu Suzuki Takanobu Suzuki, Hiroyuki Yaguchi, Hajime Okumura, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringAluminium NitrideOptical MaterialsEngineering	2000	58

Page 1