Yasuto Hijikata - Concepedia

Author

Yasuto Hijikata

Also Known As

Hijikata, Y., Hijikata, Yasuto, Y. Hijikata, Yasuto Hijikata, Yasuto Hijikata Yasuto Hijikata, Yoshinori Hijikata, Yukihiro Ishida Hijikata, Yukina Hijikata

184

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Saitama University National Institutes for Quantum Science and Technology The University of Tokyo Sanken Electric (Japan)National Institute of Advanced Industrial Science and Technology

About

Yasuto Hijikata is an author at Saitama University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	49	1.2K
2	Applied Physics	19	45	1.1K
3	Arts	2	2	32
4	Natural Sciences	2	2	41
5	Medicine	1	1	16

Yasuto Hijikata

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films Yasuto Hijikata, Hiroyuki Yaguchi, M. Yoshikawa, Applied Surface Science Materials ScienceComposition AnalysisSio2/sic InterfacesEngineeringOxide Electronics	2001	122
Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide Hannes Kraus, D. Simin, Christian Kasper, Nano Letters	2017	111
A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida Applied Physics Express Materials EngineeringElectrical EngineeringEngineeringDerived Growth RatesSilicon Carbide Oxidation	2009	93
Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs Koichi Murata, Satoshi Mitomo, Takuma Matsuda, physica status solidi (a) Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringBias Temperature Instability	2016	49
Differences in SiC thermal oxidation process between crystalline surface orientations observed by <i>in-situ</i> spectroscopic ellipsometry Daisuke Goto, Yasuto Hijikata, Shuhei Yagi, Journal of Applied Physics Materials ScienceSurface CharacterizationChemical EngineeringOxidation ProcessEngineering	2015	48
Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringThermal Oxidation ProcessThin Oxide Regime	2008	46
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties Shin Sato, Takuma Narahara, Yuta Abe, Journal of Applied Physics Materials ScienceSemiconductorsNcvsi− CentersIon ImplantationEngineering	2019	45
Unified theory of silicon carbide oxidation based on the Si and C emission model Daisuke Goto, Yasuto Hijikata Journal of Physics D Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringGrowth Rates	2016	42
Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface Shin Sato, Tomoya Honda, Takahiro Makino, ACS Photonics PhotonicsElectrical EngineeringSolid-state LightingEngineeringSingle Photon Source	2018	36
Growth Rate Enhancement of (0001)-Face Silicon–Carbide Oxidation in Thin Oxide Regime Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, Japanese Journal of Applied Physics Materials ScienceEngineeringThin Oxide RegimeOxidation ResistanceOxide Electronics	2007	34

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