M. Yoshikawa

Intrinsic Defects in Cubic Silicon Carbide

H. Itoh, A. Kawasuso, Takeshi Ohshima et al. · physica status solidi (a) · 1997 · 148 citations

Materials Engineering, Electrical Engineering, Point Defects +13

Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

Yasuto Hijikata, Hiroyuki Yaguchi, M. Yoshikawa et al. · Applied Surface Science · 2001 · 122 citations

Materials Science, Composition Analysis, Sio2/sic Interfaces +9

Radiation induced defects in CVD-grown 3C-SiC

H. Itoh, M. Yoshikawa, I. Nashiyama et al. · IEEE Transactions on Nuclear Science · 1990 · 88 citations

Materials Engineering, Point Defect, Engineering +12

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

A. Kawasuso, H. Itoh, N. Morishita et al. · Applied Physics A · 1998 · 52 citations

Engineering, Physics, Electron Spin Resonance +8

Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure

M. Yoshikawa, H. Itoh, Yukinori Morita et al. · Journal of Applied Physics · 1991 · 51 citations

Materials Engineering, Materials Science, Electrical Engineering +13