I. Nashiyama

Intrinsic Defects in Cubic Silicon Carbide

H. Itoh, A. Kawasuso, Takeshi Ohshima et al. · physica status solidi (a) · 1997 · 148 citations

Materials Engineering, Electrical Engineering, Point Defects +13

Electron spin resonance in electron-irradiated 3C-SiC

Hisayoshi Itoh, Naohiro Hayakawa, I. Nashiyama et al. · Journal of Applied Physics · 1989 · 125 citations

Materials Science, Electron-irradiation-induced Defects, Nuclear Ceramic +12

Radiation induced defects in CVD-grown 3C-SiC

H. Itoh, M. Yoshikawa, I. Nashiyama et al. · IEEE Transactions on Nuclear Science · 1990 · 88 citations

Materials Engineering, Point Defect, Engineering +12

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

H. Asai, I. Nashiyama, Kenji Sugimoto et al. · IEEE Transactions on Nuclear Science · 2014 · 87 citations

Electrical Engineering, Engineering, Power Device +10

Single-event current transients induced by high energy ion microbeams

I. Nashiyama, T. Hirao, Tomihiro Kamiya et al. · IEEE Transactions on Nuclear Science · 1993 · 82 citations

Electrical Engineering, Single-event Current Transients, Single-event Upset +14