Hisayoshi Itoh - Concepedia

Author

Hisayoshi Itoh

Japan Atomic Energy Agency

Also Known As

Hisayoshi ITOH, Hisayoshi Itoh

162

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Japan Atomic Energy Agency University of Tsukuba Friedrich-Alexander-Universität Erlangen-Nürnberg Toyota Technological Institute Advanced Science Research Center

About

Hisayoshi Itoh is an author at Japan Atomic Energy Agency specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	42	2K
2	Applied Physics	19	40	1.9K
3	Natural Sciences	2	2	84
4	Chemical Engineering	2	2	119
5	Medicine	1	1	13

Hisayoshi Itoh

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Analysis of electronic structures of 3d transition metal-doped TiO 2 based on band calculations T. Umebayashi, Tetsuya Yamaki, Hisayoshi Itoh, Journal of Physics and Chemistry of Solids Materials ScienceTransition Metal ChalcogenidesEngineeringOxide ElectronicsCondensed Matter Physics	2002	701
Electron spin resonance in electron-irradiated 3C-SiC Hisayoshi Itoh, Naohiro Hayakawa, I. Nashiyama, Journal of Applied Physics Materials ScienceElectron-irradiation-induced DefectsNuclear CeramicEngineeringPhysics	1989	125
Preparation of anatase and rutile thin films by controlling oxygen partial pressure Dani Gustaman Syarif, A. Miyashita, Tetsuya Yamaki, Applied Surface Science Materials ScienceMaterials EngineeringChemical EngineeringEngineeringRutile Thin Films	2002	96
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells N. Dharmarasu, Masafumi Yamaguchi, Aurangzeb Khan, Applied Physics Letters Multijuction Solar CellsEngineeringRadiation Materials ScienceRadiation EffectRadiation Exposure	2001	84
Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6<i>H</i>-SiC studied by positron lifetime spectroscopy A. Kawasuso, Hisayoshi Itoh, Sohei Okada, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringPhysics	1996	76
Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si Hisayoshi Itoh, Masahito Yoshikawa, I. Nashiyama, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringPhotoluminescenceEngineering	1995	64
Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells Aurangzeb Khan, Masafumi Yamaguchi, Yoshio Ohshita, Journal of Applied Physics Wide-bandgap SemiconductorBoron-doped SiEngineeringRadiation-induced DefectsSilicon On Insulator	2001	61
Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells Shirou Kawakita, Mitsuru Imaizumi, Masafumi Yamaguchi, Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringThin-film Solar CellsEngineering	2002	59
Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons Hisayoshi Itoh, Masahito Yoshikawa, I. Nashiyama, Journal of Electronic Materials Electrical EngineeringEngineeringNuclear PhysicsApplied PhysicsDefect Formation	1992	57
Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide Takeshi Ohshima, Hisayoshi Itoh, Masahito Yoshikawa Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEngineeringSilicon MosfetsBias Temperature Instability	2001	54

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