Aurangzeb Khan - Concepedia

Author

Aurangzeb Khan

Toyota Technological Institute

Also Known As

AURANGZEB KHAN, Aurangzeb Khan

Publications

741

Citations

H-Index

Concepts

All Affiliations

Toyota Technological Institute University of South Alabama Physique et Mécanique des Milieux Hétérogènes Sorbonne Université Japan Petroleum Energy Center

About

Aurangzeb Khan is an author at Toyota Technological Institute specializing in engineering, applied physics, and photovoltaics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	17	604
2	Applied Physics	14	15	553
3	Medicine	1	1	24
4	Natural Sciences	1	1	61
5	Social Sciences	1	1	24

Aurangzeb Khan

Publications

651

Citations

H-Index

Page 1

	Year	Citations
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells N. Dharmarasu, Masafumi Yamaguchi, Aurangzeb Khan, Applied Physics Letters Multijuction Solar CellsEngineeringRadiation Materials ScienceRadiation EffectRadiation Exposure	2001	84
Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells Aurangzeb Khan, Masafumi Yamaguchi, Yoshio Ohshita, Journal of Applied Physics Wide-bandgap SemiconductorBoron-doped SiEngineeringRadiation-induced DefectsSilicon On Insulator	2001	61
Deep level analysis of radiation-induced defects in Si crystals and solar cells Masafumi Yamaguchi, Aurangzeb Khan, Stephen Taylor, Journal of Applied Physics EngineeringRadiation-induced DefectsDlts MeasurementsDefect ToleranceSilicon On Insulator	1999	59
Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin, Journal of Applied Physics EngineeringPhotovoltaic DevicesPhotovoltaic SystemDefect TolerancePhotovoltaics	2002	51
Recombination enhanced defect reactions in 1 MeV electron irradiated <i>p</i> InGaP Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin, Journal of Applied Physics EngineeringDefect ReactionsDirect RecombinationDefect ToleranceSemiconductors	2001	46
Correlation of nitrogen related traps in InGaAsN with solar cell properties Aurangzeb Khan, Sarah Kurtz, Suraj Prasad, Applied Physics Letters EngineeringOptoelectronic DevicesPhotovoltaicsSolar Cell PropertiesSemiconductor Nanostructures	2007	45
Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in <i>p</i>-InGaP and solar cells Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin, Applied Physics Letters EngineeringRadiation EffectIngap Solar CellsRadiation-induced DefectsDefect Tolerance	2000	41
Analysis for superior radiation resistance of InP-based solar cells Masafumi Yamaguchi, Aurangzeb Khan, N. Dharmarasu Solar Energy Materials and Solar Cells EngineeringApplied PhysicsBuilding-integrated PhotovoltaicsPhotovoltaic SystemSuperior Radiation Resistance	2002	30
Processing and Structure of Carbon Nanofiber Paper Zhongfu Zhao, Jihua Gou, Aurangzeb Khan Journal of Nanomaterials Materials ScienceNanofiberChemical EngineeringCarbon NanofibersEngineering	2009	29
Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells Aurangzeb Khan, Masafumi Yamaguchi, Nothaj Dharmaso, Japanese Journal of Applied Physics Electrical EngineeringMinority Carrier InjectionEngineeringPhysicsMinority Carrier	2002	26

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