Aurangzeb Khan

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

N. Dharmarasu, Masafumi Yamaguchi, Aurangzeb Khan et al. · Applied Physics Letters · 2001 · 84 citations

Multijuction Solar Cells, Engineering, Radiation Materials Science +21

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Aurangzeb Khan, Masafumi Yamaguchi, Yoshio Ohshita et al. · Journal of Applied Physics · 2001 · 61 citations

Wide-bandgap Semiconductor, Boron-doped Si, Engineering +22

Deep level analysis of radiation-induced defects in Si crystals and solar cells

Masafumi Yamaguchi, Aurangzeb Khan, Stephen Taylor et al. · Journal of Applied Physics · 1999 · 59 citations

Engineering, Radiation-induced Defects, Dlts Measurements +19

Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells

Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin et al. · Journal of Applied Physics · 2002 · 51 citations

Engineering, Photovoltaic Devices, Photovoltaic System +17

Recombination enhanced defect reactions in 1 MeV electron irradiated <i>p</i> InGaP

Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin et al. · Journal of Applied Physics · 2001 · 46 citations

Engineering, Defect Reactions, Direct Recombination +19