Journal of Applied Physics · 1989 · 125 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCeramicsElectronic MaterialsDefects In CeramicsDefects In Electronic MaterialsElectron Spin Resonance SpectroscopyRadiation Damage In MaterialsSpin DynamicsActivation EnergyFirst-order KineticsFirst-order ReactionIrradiation DamageRadiation Defect CharacterizationRadiation DefectsSilicon CarbideSilicon Carbide (Sic) Materials
Electron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of 2.0029±0.0001. Isochronal and isothermal annealing of electron-irradiated 3C-SiC showed that this center was annealed at three stages (150, 350, and 750 °C) and that the 750 °C stage exhibited first-order reaction with an activation energy of 2.2±0.3 eV.
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