Temperature dependence of electrical properties of <i>n</i>- and <i>p</i>-type 3C-SiC

M. Yamanaka, Hiroshi Daimon, E. Sakuma, +2

Journal of Applied Physics

EngineeringTemperature DependenceAcoustic PhononSemiconductor DeviceSemiconductors +15

Electron spin resonance in electron-irradiated 3C-SiC

Hisayoshi Itoh, Naohiro Hayakawa, I. Nashiyama, +1

Journal of Applied Physics

Materials ScienceElectron-irradiation-induced DefectsNuclear CeramicEngineeringPhysics +10

High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition

Katsuhiro Sasaki, E. Sakuma, S. Misawa, +2

Applied Physics Letters

EngineeringLarger Mobilities3C-sic Epitaxial Layers3C-sic LayersSemiconductor Device +15

Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

Hajime Okumura, E. Sakuma, J. H. Lee, +4

Journal of Applied Physics

Materials ScienceMaterials EngineeringEngineeringRaman ScatteringOptical Properties +13

Schottky barrier diodes on 3C-SiC

S. Yoshida, Katsuhiro Sasaki, E. Sakuma, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesSchottky Barrier Contacts +12

Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering

Shiro Hara, W. F. J. Slijkerman, J. F. van der Veen, +4

Surface Science

Materials ScienceSurface PhasesSurface CharacterizationEngineeringElemental Composition +5

Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si

Hideko Mukaida, Hajime Okumura, J. H. Lee, +5

Journal of Applied Physics

Materials ScienceElastic Deformation TheoryEngineeringMechanical PropertiesRaman Scattering +11

Experimental 3C-SiC MOSFET

Yasushi Kondo, Tsunaki Takahashi, K. Ishi, +6

IEEE Electron Device Letters

Materials EngineeringMaterials ScienceElectrical EngineeringSi SubstrateEngineering +13

Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition

M. Shinohara, Mitsugu Yamanaka, Hiroshi Daimon, +4

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringRoom Temperature +9

Schottky-barrier field-effect transistors of 3C-SiC

S. Yoshida, Hiroshi Daimon, M. Yamanaka, +3

Journal of Applied Physics

Semiconductor TechnologySchottky-barrier Field-effect TransistorsElectrical EngineeringEngineeringElectronic Engineering +5