Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

Abstract

Heteroepitaxial growth of 3C- and 6H-silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C-SiC(111) can be epitaxially grown on 6H-SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.