High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition

Abstract

Electrical properties of 3C-SiC layers, epitaxially grown on silicon by chemical vapor deposition, have been investigated at the temperatures between room temperature and 850 °C. In this temperature range, the electron mobility changes with temperature as μH∼T−1.2∼−1.4. The weaker temperature dependence of mobility and the larger mobilities compared with other polytypes of SiC suggest that 3C-SiC is a promising material for devices operated at high temperatures.