H. Itoh

Band gap narrowing of titanium dioxide by sulfur doping

T. Umebayashi, Tetsuya Yamaki, H. Itoh et al. · Applied Physics Letters · 2002 · 1.4K citations

Materials Science, Oxide Heterostructures, Materials Engineering +11

Doping of SiC by Implantation of Boron and Aluminum

T. Troffer, M. Schadt, Thomas Frank et al. · physica status solidi (a) · 1997 · 291 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Divacancy in 4H-SiC

Nguyên Tiên Són, Patrick Carlsson, Jawad Ul‐Hassan et al. · Physical Review Letters · 2006 · 207 citations

Spintronics, Engineering, Physics +14

Intrinsic Defects in Cubic Silicon Carbide

H. Itoh, A. Kawasuso, Takeshi Ohshima et al. · physica status solidi (a) · 1997 · 148 citations

Materials Engineering, Electrical Engineering, Point Defects +13

Fluorine-doping in titanium dioxide by ion implantation technique

Tetsuya Yamaki, T. Umebayashi, T. Sumita et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 136 citations

Materials Science, Materials Engineering, Ion Implantation +3