Ken Fujita - Concepedia

Author

Ken Fujita

The University of Tokyo

Also Known As

Fujita Ken, K Fujita, K. Fujita, Ken Fujita, Ken Fujita Ken Fujita

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo Hamamatsu Photonics (Japan)

About

Ken Fujita is an author at The University of Tokyo specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	33	1.4K
2	Applied Physics	19	32	1.4K
3	Health Sciences	2	2	24
4	Natural Sciences	1	1	11
5	Biomedical Engineering	1	1	11

Ken Fujita

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces Heiji Watanabe, Koichi Kato, Tsuyoshi Uda, Physical Review Letters Materials ScienceSurface CharacterizationInitial Layer-by-layer OxidationLayer-by-layer OxidationEngineering	1998	288
Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi, Applied Physics Letters Materials ScienceSemiconductorsGe Surface SegregationEngineeringPhysics	1991	217
Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb Ken Fujita, S. Fukatsu, Hiroyuki Yaguchi, Japanese Journal of Applied Physics Ge Surface SegregationEngineeringMbe GrowthSilicon On InsulatorSemiconductor Nanostructures	1990	88
Thermal decomposition of ultrathin oxide layers on Si(111) surfaces mediated by surface Si transport Heiji Watanabe, Ken Fujita, Masakazu Ichikawa Applied Physics Letters EngineeringReflection Electron MicroscopySurface Si TransportVoid GrowthSilicon On Insulator	1997	87
Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy Heiji Watanabe, Ken Fujita, Masakazu Ichikawa Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringTunneling MicroscopyPhysics	1998	62
Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation Ken Fujita, S. Fukatsu, Hiroyuki Yaguchi, Applied Physics Letters Materials ScienceGe Surface SegregationTopmost Ge LayerPhysicsEngineering	1991	50
Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films Ken Fujita, Heiji Watanabe, Masakazu Ichikawa Applied Physics Letters Selective Epitaxial GrowthEngineeringThin Film Process TechnologySilicon On InsulatorSemiconductors	1997	49
Dislocation glide motion in heteroepitaxial thin films of Si<sub>1−x</sub>Ge<sub>x</sub>/Si(100) Yoshifumi Yamashita, Koji Maeda, Ken Fujita, Philosophical Magazine Letters Materials ScienceSemiconductorsKink CollisionEngineeringDislocation Interaction	1993	47
Atomic-step observation at buried SiO2Si(111) interfaces by scanning reflection electron microscopy Heiji Watanabe, Ken Fujita, Masakazu Ichikawa Surface Science Surface CharacterizationAtomic-step ObservationEngineeringPhysicsReflection Electron Microscopy	1997	44
Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy Motoshi Shibata, Yoshiki Nitta, Ken Fujita, Applied Physics Letters EngineeringSi Surface WindowsOptoelectronic DevicesField Emission ElectronsSilicon On Insulator	1998	42

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