Shoichiro Tanigawa - Concepedia

Author

Shoichiro Tanigawa

Also Known As

S Tanigawa, S. TANIGAWA, S. Tanigawa, Shoichiro TANIGAWA, Shoichiro Tanigawa, Shoichiro Tanigawa Shoichiro Tanigawa, Tanigawa, S.

289

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

University of Tsukuba The University of Tokyo Hitachi (Japan)NEC (Japan)Sumitomo Electric Industries (Japan)

About

Shoichiro Tanigawa is an author at University of Tsukuba specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	76	1.9K
2	Applied Physics	24	77	1.9K
3	Natural Sciences	13	19	435
4	Chemistry	10	11	206
5	Chemical Engineering	1	1	51

Shoichiro Tanigawa

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Intrinsic Defects in Cubic Silicon Carbide H. Itoh, A. Kawasuso, Takeshi Ohshima, physica status solidi (a) Materials EngineeringElectrical EngineeringPoint DefectsEngineeringPhysics	1997	148
Annealing studies of low-temperature-grown GaAs:Be D. E. Bliss, W. Walukiewicz, Joel W. Ager, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringLtmbe LayersEngineering	1992	110
Stretching of slow positron pulses generated with an electron linac Takashi Akahane, Toshinobu Chiba, N. Shiotani, Applied Physics A Nuclear PhysicsPhysicsNatural SciencesParticle PhysicsSlow Positron Pulses	1990	62
Studies of defects at thermal equilibrium and melting in Cu and Ni by positron annihilation S. Nanao, K. Kuribayashi, Shoichiro Tanigawa, Journal of Physics F Metal Physics Solid PhaseEngineeringPositron Annihilation SpectroscopyPositron AnnihilationSolid Phases	1977	52
Transition and relaxation processes of polyethylene, polypropylene, and polystyrene studied by positron annihilation Akira Uedono, Takeshi Kawano, Shoichiro Tanigawa, Journal of Polymer Science Part B Polymer Physics EngineeringRelaxation ProcessesPositron Annihilation TechniquePolymer NanocompositesChemistry	1997	51
A Study of Vacancy-Type Defects in B<sup>+</sup>-Implanted SiO<sub>2</sub>/Si by a Slow Positron Beam Akira Uedono, Shoichiro Tanigawa, J. Sugiura, Japanese Journal of Applied Physics Sio 2Defect ToleranceIncident Positron EnergyIon ImplantationEngineering	1989	49
A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beam Shoichiro Tanigawa, Y. Iwase, Akira Uedono, Journal of Nuclear Materials Materials ScienceRelease ProcessesEngineeringPhysicsPositron Annihilation Spectroscopy	1985	47
Anisotropic momentum distribution of positron-annihilation radiation in semiconductors Mineo Saito, Atsushi Oshiyama, Shoichiro Tanigawa Physical review. B, Condensed matter SemiconductorsEngineeringRadiation GenerationPhysicsMomentum Distribution	1991	45
Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility Tetsuji Ueno, Toshifumi Irisawa, Y. Shiraki, Thin Solid Films High Hole MobilityEngineeringPhysicsApplied PhysicsSige/ge/sige Heterostructures	2000	40
Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams Akira Uedono, Long Wei, Shoichiro Tanigawa, Journal of Applied Physics Materials ScienceSio2 FilmEpitaxial GrowthEngineeringMonoenergetic Positron Beams	1994	40

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