Reliability of compound semiconductor devices for space applications

Donor neutralization in GaAs(Si) by atomic hydrogen

J. Chevallier, W. C. Dautremont–Smith, C. W. Tu et al. · Applied Physics Letters · 1985 · 234 citations

Engineering, Materials Engineering, Materials Science +17

Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies

P.H. Ladbrooke, Stephen Blight · IEEE Transactions on Electron Devices · 1988 · 172 citations

Engineering, Electrical Engineering, Microelectronics +16

Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

C. Canali, F. Castaldo, F. Fantini et al. · IEEE Electron Device Letters · 1986 · 73 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

HEMT degradation in hydrogen gas

P.C. Chao, Ming-Yih Kao, Karen J. Nordheden et al. · IEEE Electron Device Letters · 1994 · 71 citations

Engineering, Electrical Engineering, Materials Science +14

Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenated <i>n</i>-type GaAs doped with silicon

Abdul Jalil, J. Chevallier, J.C. Pesant et al. · Applied Physics Letters · 1987 · 41 citations

Natural Sciences, Materials Science, Physics +15