P.H. Ladbrooke

Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies

P.H. Ladbrooke, Stephen Blight · IEEE Transactions on Electron Devices · 1988 · 172 citations

Engineering, Electrical Engineering, Microelectronics +16

The role of the device surface in the high voltage behaviour of the GaAs MESFET

T.M. Barton, P.H. Ladbrooke · Solid-State Electronics · 1986 · 76 citations

Engineering, Electrical Engineering, Materials Science +15

The physics of excess electron velocity in submicron-channel FET’s

Rong Huang, P.H. Ladbrooke · Journal of Applied Physics · 1977 · 52 citations

Engineering, Electrical Engineering, Physics +17

Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current

M. M. Ahmed, H. Ahmed, P.H. Ladbrooke · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Narrow pulse measurement of drain characteristics of GaAs MESFETs

T.M. Barton, C.M. Snowden, J.R. Richardson et al. · Electronics Letters · 1987 · 24 citations

Engineering, Electrical Engineering, Microelectronics +12