Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region

High-Frequency Solid-State Electronic Devices

R.J. Trew · IEEE Transactions on Electron Devices · 2005 · 102 citations

Engineering, Electrical Engineering, Materials Science +17

Improved performance of SiC MESFETs using double-recessed structure

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 77 citations

Engineering, Electrical Engineering, Materials Science +13

S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

H.G. Henry, G. Augustine, G. DeSalvo et al. · IEEE Transactions on Electron Devices · 2004 · 54 citations

Engineering, Electrical Engineering, Microelectronics +16

Comparison of SiC, GaAs, and Si RF MESFET power densities

C.E. Weitzel · IEEE Electron Device Letters · 1995 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Capacitance-voltage characteristics of microwave Schottky diodes

Boris Gelmont, M. S. Shur, R.J. Mattauch · IEEE Transactions on Microwave Theory and Techniques · 1991 · 27 citations

Engineering, Electrical Engineering, Materials Science +17