IEEE Electron Device Letters · 1995 · 49 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsBreakdown VoltageElectron MobilityHigh-electron-mobility Transistor ModelingHigh-electron-mobility TransistorsPower DensitySilicon CarbideSilicon Carbide (Sic) MaterialsVoltage
The maximum power density of Si, GaAs, and 4H-SiC MESFET's was modeled using material parameters, a planar MESFET cross section, and a piecewise linear MESFET drain characteristic. The maximum power density for the Si, GaAs, and 4H-SiC was calculated to be 0.45 W/mm, 0.78 W/mm, and 17.37 W/mm at drain voltages of 8.4 V, 8.3 V, and 105 V, respectively. Modeling power density as a function of drain voltage showed that, for low voltage applications, the GaAs MESFET has the highest power density because of its high electron mobility and very low channel resistance (R/sub on/). For high voltage applications, the 4H-SiC MESFET has the highest absolute power density because of the higher breakdown voltage of this material. Experiment data agree qualitatively with the modeled results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Metal Schottky barrier contacts to alpha 6H-SiC
J. R. Waldrop, R. W. Grant, Y. C. Wang et al. · Journal of Applied Physics · 1992 · 178 citations
4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Electron Device Letters · 1994 · 83 citations
RF performance of SiC MESFET's on high resistivity substrates
S. Sriram, R.C. Clarke, Albert A. Burk et al. · IEEE Electron Device Letters · 1994 · 58 citations