IEEE Electron Device Letters · 1994 · 58 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsGainMicrowave DevicesRadio-frequency DevicesResistivitySemiconductor Materials For Microwave DevicesSilicon CarbideSilicon Carbide (Sic) MaterialsSubstrate Engineering
State-of-the art SiC MESFET's showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of these devices are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Large diameter 6H-SiC for microwave device applications
H. McD. Hobgood, D.L. Barrett, J.P. McHugh et al. · Journal of Crystal Growth · 1994 · 84 citations