Statistics
Publications
15
Citations
523
H-Index
12
Active since
1967
T.J. Smith is an author at Westinghouse Electric (United States) specializing in engineering, electrical engineering, and semiconductor devices.
Publications per year
1967–2019
15
15
Applications of SiC MESFETs and GaN HEMTs in power amplifier design
W.L. Pribble, John W. Palmour, S.T. Sheppard et al. · 2003 · 82 citations
Wide bandgap semiconductor devices and MMICs for RF power applications
John W. Palmour, S.T. Sheppard, R.P. Smith et al. · 2002 · 79 citations
4H-SiC MESFET's with 42 GHz f/sub max/
S. Sriram, G. Augustine, Albert A. Burk et al. · IEEE Electron Device Letters · 1996 · 70 citations
RF performance of SiC MESFET's on high resistivity substrates
S. Sriram, R.C. Clarke, Albert A. Burk et al. · IEEE Electron Device Letters · 1994 · 58 citations
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