C.L. Zhu

Improved performance of SiC MESFETs using double-recessed structure

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 77 citations

Semiconductor Device, Electrical Engineering, Sic Mesfets +1

Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs

C.L. Zhu, E. Rusli, J. Almira et al. · Materials science forum · 2005 · 25 citations

Electrical Engineering, Engineering, Power Device +10

Characterization of SiC MESFETs with narrow channel layer

Rusli Rusli, C.L. Zhu, Peng Zhao et al. · Microelectronic Engineering · 2005 · 24 citations

Electrical Engineering, Engineering, Sic Mesfets +2

Dual-channel 4H-SiC metal semiconductor field effect transistors

C.L. Zhu, Rusli Rusli, Peng Zhao · Solid-State Electronics · 2007 · 24 citations

Electrical Engineering, Engineering, Applied Physics +2

A three-region analytical model for short-channel SiC MESFETs

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 14 citations

Electrical Engineering, Engineering, Microelectronics +2