Material optimisation for AlGaN/GaN HFET applications

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.6K citations

Wide-bandgap Semiconductor, Engineering, Dimensional Electron Gases +18

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 687 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters · 1997 · 275 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 213 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

S. Keller, Giacinta Parish, P. Fini et al. · Journal of Applied Physics · 1999 · 174 citations

Materials Science, Materials Engineering, Thin Alxga1−xn Layers +13