J. L. Farvacque

Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

S. Dassonneville, A. Amokrane, Brigitte Sieber et al. · Journal of Applied Physics · 2001 · 65 citations

Materials Science, Photonics, Accelerating Voltage +15

Free-carrier mobility in GaN in the presence of dislocation walls

J. L. Farvacque, Z. Bougrioua, Ingrid Moerman · Physical review. B, Condensed matter · 2001 · 40 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, Ingrid Moerman, Nikhil Sharma et al. · Journal of Crystal Growth · 2001 · 32 citations

Materials Engineering, Electrical Engineering, Engineering +5

Occupation statistics of dislocation deep levels in III-V compounds

R. A. Masut, Claude M. Penchina, J. L. Farvacque · Journal of Applied Physics · 1982 · 32 citations

Engineering, Occupation Statistics, Dielectric Function +17

The Hole Mobility in a‐Edge‐Dislocated Tellurium Crystals

J. C. Doukhan, R. Drope, J. L. Farvacque et al. · physica status solidi (b) · 1974 · 29 citations

Materials Science, Engineering, Dislocation Interaction +13