E. J. Thrush - Concepedia

Author

E. J. Thrush

Thomas Swan (United Kingdom)

Also Known As

E J Thrush, E J. Thrush, E. J. THRUSH, E. J. Thrush, E.J Thrush, E.J. Thrush, Moerman, THRUSH, EJ, Thrush, E.J.

103

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Thomas Swan (United Kingdom)University of Cambridge University of Manchester Ghent University University College London

About

E. J. Thrush is an author at Thomas Swan (United Kingdom) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	19	36	1.5K
2	Engineering	18	35	1.4K
3	Electrical Engineering	13	18	729
4	Chemical Engineering	3	3	147
5	Chemistry	1	1	55

E. J. Thrush

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures D. M. Graham, A. Soltani-Vala, P. Dawson, Journal of Applied Physics SemiconductorsPhotonicsCategoryquantum ElectronicsPhotoluminescenceIndium Fractions	2005	210
Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates M.A. Gibbon, J. P. Stagg, C.G. Cureton, Semiconductor Science and Technology EngineeringPlanar Inp SubstratesElectron MicroscopyOptical PropertiesLow-pressure Mocvd	1993	152
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering M. E. Vickers, Menno J. Kappers, T. M. Smeeton, Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringThickness RatioEngineering	2003	119
Indium segregation in InGaN quantum-well structures N. S. Duxbury, U. Bangert, P. Dawson, Applied Physics Letters Materials ScienceQuantum ScienceWide-bandgap SemiconductorEngineeringPhysics	2000	114
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem Fabien Massabuau, Matthew Davies, Fabrice Oehler, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence	2014	71
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes Rachel A. Oliver, Fabien Massabuau, Menno J. Kappers, Applied Physics Letters EngineeringNanoelectronicsLight-emitting DiodesCompound SemiconductorPhotonics	2013	56
Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates B. Garrett, E. J. Thrush Journal of Crystal Growth Materials EngineeringIi-vi SemiconductorChemical EngineeringEpitaxial GrowthEngineering	1989	55
Misfit dislocations in In‐rich InGaN/GaN quantum well structures Pedro M. F. J. Costa, Ranjan Datta, Menno J. Kappers, physica status solidi (a)	2006	54
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE Dandan Zhu, C. McAleese, K K McLaughlin, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Wide-bandgap SemiconductorEngineeringUniform GanAlgan Buffer LayerNanoelectronics	2009	49
Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design Roger P. Pawlowski, Constantinos Theodoropoulos, Andrew G. Salinger, Journal of Crystal Growth Chemical EngineeringEngineeringReactor DesignApplied PhysicsAluminum Gallium Nitride	2000	47

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