E. J. Thrush

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham, A. Soltani-Vala, P. Dawson et al. · Journal of Applied Physics · 2005 · 210 citations

Semiconductors, Photonics, Categoryquantum Electronics +14

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Planar Inp Substrates, Electron Microscopy +17

Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

M. E. Vickers, Menno J. Kappers, T. M. Smeeton et al. · Journal of Applied Physics · 2003 · 119 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Indium segregation in InGaN quantum-well structures

N. S. Duxbury, U. Bangert, P. Dawson et al. · Applied Physics Letters · 2000 · 114 citations

Materials Science, Quantum Science, Wide-bandgap Semiconductor +14

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Fabien Massabuau, Matthew Davies, Fabrice Oehler et al. · Applied Physics Letters · 2014 · 71 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +12