M.A. Gibbon

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Planar Inp Substrates, Electron Microscopy +17

Energy Flow and Power Factor in Nonsinusoidal Circuits

M.A. Gibbon · Electronics and Power · 1980 · 143 citations

Electrical Engineering, Power Engineering, Engineering +5

Transmission beyond the dispersion limit using anegative chirpelectroabsorption modulator

Julian Fells, M.A. Gibbon, I.H. White et al. · Electronics Letters · 1994 · 49 citations

Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD

E. J. Thrush, J. P. Stagg, M.A. Gibbon et al. · Materials Science and Engineering B · 1993 · 46 citations

Engineering, Compound Semiconductor, Applied Physics +4

Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

E. J. Thrush, M.A. Gibbon, J. P. Stagg et al. · Journal of Crystal Growth · 1992 · 41 citations

Materials Science, Materials Engineering, Electrical Engineering +9