J. P. Stagg

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Planar Inp Substrates, Electron Microscopy +17

Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy

G. R. Antell, A. Briggs, B.R. Butler et al. · Applied Physics Letters · 1988 · 98 citations

Ii-vi Semiconductor, Engineering, Physics +12

Sliding-blade MEMS iris and variable optical attenuator

R.R.A. Syms, Huiming Zou, J. P. Stagg et al. · Journal of Micromechanics and Microengineering · 2004 · 78 citations

Variable Attenuation, Optical Materials, Engineering +16

Drift mobilities of Na+ and K+ ions in SiO2 films

J. P. Stagg · Applied Physics Letters · 1977 · 72 citations

Materials Science, Drift Mobilities, Grown Sio2 Films +15

The kinetic behavior of mobile ions in the Al-SiO2-Si system

M.R. Boudry, J. P. Stagg · Journal of Applied Physics · 1979 · 55 citations

Engineering, Tsic Curve, Chemistry +17