C.G. Cureton

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Materials Engineering, Materials Science +14

Efficient production of13C2F4 in the infrared laser photolysis of CHClF2

M. Gauthier, C.G. Cureton, P. A. Hackett et al. · Applied Physics B · 1982 · 83 citations

Natural Sciences, Chemical Engineering, Chemistry +9

Time-resolved emission studies of poly(n-v1nyl carbazole) using pulsed laser excitation

A. J. Roberts, C.G. Cureton, D. Phillips · Chemical Physics Letters · 1980 · 42 citations

Natural Sciences, Chemistry, Physics +16

Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

E. J. Thrush, M.A. Gibbon, J. P. Stagg et al. · Journal of Crystal Growth · 1992 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Simple method of fabricating polarisation-insensitiveand very low crosstalkAWG grating devices

S.M. Ojha, C.G. Cureton, T. Bricheno et al. · Electronics Letters · 1998 · 40 citations

Engineering, Electrical Engineering, Materials Science +17