Fabien Massabuau

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Fabien Massabuau, S.‐L. Sahonta, L. Trinh-Xuan et al. · Applied Physics Letters · 2012 · 94 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Simon Hammersley, Menno J. Kappers, Fabien Massabuau et al. · Applied Physics Letters · 2015 · 72 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +19

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Fabien Massabuau, Matthew Davies, Fabrice Oehler et al. · Applied Physics Letters · 2014 · 71 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +12

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

D. Field, Jerome A. Cuenca, Matthew D. Smith et al. · ACS Applied Materials & Interfaces · 2020 · 70 citations

α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

Joseph W. Roberts, John Jarman, Duncan N. Johnstone et al. · Journal of Crystal Growth · 2018 · 66 citations

Materials Engineering, Materials Science, Engineering +5