Fabien Massabuau

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Fabien Massabuau, S.‐L. Sahonta, L. Trinh-Xuan et al. · Applied Physics Letters · 2012 · 94 citations

Engineering, Materials Engineering, Materials Science +16

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Simon Hammersley, Menno J. Kappers, Fabien Massabuau et al. · Applied Physics Letters · 2015 · 73 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Fabien Massabuau, Matthew Davies, Fabrice Oehler et al. · Applied Physics Letters · 2014 · 72 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

D. Field, Jerome A. Cuenca, Matthew D. Smith et al. · ACS Applied Materials & Interfaces · 2020 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

Edmund J.W. Smith, Afaq Habib Piracha, D. Field et al. · Carbon · 2020 · 70 citations · Full text

Engineering, Materials Engineering, Materials Science +9