S.‐L. Sahonta - Concepedia

Author

S.‐L. Sahonta

Also Known As

S-L Sahonta, S. -L. Sahonta, S. L. Sahonta, S. Sahonta, S.-L. Sahonta, S.-Lata Sahonta, S.‐L. Sahonta, S.–L. Sahonta, Sahonta, S.-L., Sahonta, Suman-Lata

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge University of Manchester Indian Institute of Technology Bombay Imperial College London Daresbury Laboratory

About

S.‐L. Sahonta is an author at University of Cambridge specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	27	928
2	Applied Physics	18	26	839
3	Electrical Engineering	10	10	432
4	Natural Sciences	2	2	64
5	Chemical Engineering	1	1	89

S.‐L. Sahonta

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Fabien Massabuau, S.‐L. Sahonta, L. Trinh-Xuan, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsTrench Defects	2012	94
Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications Canlin Ou, Pedro E. Sánchez‐Jiménez, Anuja Datta, ACS Applied Materials & Interfaces EngineeringEnergy ConversionPolymer NanocompositesZno NwsRobust Piezoelectric Nanogenerator	2016	89
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions Simon Hammersley, Menno J. Kappers, Fabien Massabuau, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesBlue Spectral RegionsSemiconductors	2015	72
High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga2O3 using a GaN buffer layer Mufasila Mumthaz Muhammed, Manuel A. Roldán, Yoshiyuki Yamashita, Scientific Reports	2016	61
Mg Doping Affects Dislocation Core Structures in GaN Sneha Rhode, Matthew K. Horton, Menno J. Kappers, Physical Review Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringDislocation Interaction	2013	60
Segregation of In to Dislocations in InGaN Matthew K. Horton, Sneha Rhode, S.‐L. Sahonta, Nano Letters Materials ScienceEngineeringSevere Plastic DeformationPhysicsDislocation Interaction	2015	59
X-ray diffraction analysis of cubic zincblende III-nitrides Martin Frentrup, Lok Yi Lee, S.‐L. Sahonta, Journal of Physics D Applied Physics Materials ScienceInorganic ChemistryElectrical EngineeringSolid-state LightingPoint Defects	2017	59
Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy S.‐L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, Applied Physics Letters Aluminium NitrideEngineeringEpitaxial Inaln FilmsPlatelet CoalescenceCompositional Modulations	2009	51
Strong room temperature magnetism in highly resistive strained thin films of BiFe0.5Mn0.5O3 Eun‐Mi Choi, S. Patnaik, E. Weal, Applied Physics Letters Spin TorqueMagnetic PropertiesEngineeringSpintronic MaterialMagnetic Materials	2011	49
Structure and strain relaxation effects of defects in In<i>x</i>Ga1−<i>x</i>N epilayers S. L. Rhode, Wai Yuen Fu, M. A. Moram, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTrench DefectsDefect ToleranceStrain Relaxation Effects	2014	48

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