S.‐L. Sahonta

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Fabien Massabuau, S.‐L. Sahonta, L. Trinh-Xuan et al. · Applied Physics Letters · 2012 · 94 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications

Canlin Ou, Pedro E. Sánchez‐Jiménez, Anuja Datta et al. · ACS Applied Materials & Interfaces · 2016 · 89 citations · Full text

Engineering, Energy Conversion, Polymer Nanocomposites +19

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Simon Hammersley, Menno J. Kappers, Fabien Massabuau et al. · Applied Physics Letters · 2015 · 72 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +19

High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga2O3 using a GaN buffer layer

Mufasila Mumthaz Muhammed, Manuel A. Roldán, Yoshiyuki Yamashita et al. · Scientific Reports · 2016 · 61 citations · Full text

Mg Doping Affects Dislocation Core Structures in GaN

Sneha Rhode, Matthew K. Horton, Menno J. Kappers et al. · Physical Review Letters · 2013 · 60 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +12