Concepedia

L. Considine

LC

Statistics

Publications

20

Citations

665

H-Index

14

Active since

1989

Affiliations

Thomas Swan (United Kingdom)(Current)

National Microelectronics Applications Centre (Ireland)

Ghent University

University of Cambridge

Technische Universität Darmstadt

L. Considine is an author at Thomas Swan (United Kingdom) specializing in engineering, materials science, and semiconductor materials.

Publications per year

1989–2012

20

Publications

20

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

P. Ruterana, G. Nouet, W. Van der Stricht et al. · Applied Physics Letters · 1998 · 99 citations

Engineering, Materials Engineering, Materials Science +15

Transition from electron accumulation to depletion at InGaN surfaces

T. D. Veal, P. H. Jefferson, Louis F. J. Piper et al. · Applied Physics Letters · 2006 · 98 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Temperature dependence of the photoluminescence intensity of ordered and disordered In0.48Ga0.52P

J.D. Lambkin, L. Considine, S. Walsh et al. · Applied Physics Letters · 1994 · 97 citations

Engineering, Materials Engineering, Materials Science +17

The growth of ferroelectric oxides by MOCVD

C.J. Brierley, C. Trundle, L. Considine et al. · Ferroelectrics · 1989 · 59 citations

Natural Sciences, Materials Engineering, Materials Science +17

MOVPE growth optimization of high quality InGaN films.

W. Van der Stricht, Ingrid Moerman, Piet Demeester et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +17

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