W. Van der Stricht

Exciton localization and the Stokes’ shift in InGaN epilayers

Robert Martin, P. G. Middleton, K.P. O’Donnell et al. · Applied Physics Letters · 1999 · 290 citations

Localized Excited State, Engineering, Excitation Energy Transfer +16

Indium segregation in InGaN quantum-well structures

N. S. Duxbury, U. Bangert, P. Dawson et al. · Applied Physics Letters · 2000 · 114 citations

Materials Science, Quantum Science, Wide-bandgap Semiconductor +14

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

P. Ruterana, G. Nouet, W. Van der Stricht et al. · Applied Physics Letters · 1998 · 99 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Optical linewidths of InGaN light emitting diodes and epilayers

K.P. O’Donnell, T. Breitkopf, H. Kalt et al. · Applied Physics Letters · 1997 · 75 citations

White Oled, Photonics, Electrical Engineering +15

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

M. F. Wu, A. Vantomme, S. Hogg et al. · Applied Physics Letters · 1999 · 40 citations

Wide-bandgap Semiconductor, X-ray Spectroscopy, Engineering +20