M. F. Wu

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

L. C. Nistor, H. Bender, A. Vantomme et al. · Applied Physics Letters · 2000 · 48 citations

Natural Sciences, Materials Science, Physics +13

High-precision determination of lattice constants and structural characterization of InN thin films

M. F. Wu, Shengqiang Zhou, A. Vantomme et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2006 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

M. F. Wu, A. Vantomme, S. Hogg et al. · Applied Physics Letters · 1999 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

Suppression of rare-earth implantation-induced damage in GaN

A. Vantomme, S. Hogg, M. F. Wu et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 29 citations

Engineering, Electrical Engineering, Materials Engineering +10

Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantation

M. F. Wu, A. Vantomme, G. Langouche et al. · Applied Physics Letters · 1990 · 29 citations

Engineering, Materials Engineering, Materials Science +17