72
Publications
1.6K
Citations
24
H-Index
1978
Active since
G. Langouche is an author at KU Leuven specializing in engineering, applied physics, and physics.
Top concepts
EngineeringApplied PhysicsMaterial SciencePhysicsCondensed Matter PhysicsNatural SciencesCrystalline DefectsMaterials EngineeringMicrostructureChemistry
Publications per year
1978–2017
72
72
Direct Evidence for Tetrahedral Interstitial Er in Si
U. Wahl, A. Vantomme, J. De Wächter et al. · Physical Review Letters · 1997 · 78 citations · Full text
Thin film growth of semiconducting Mg2Si by codeposition
A. Vantomme, John E. Mahan, G. Langouche et al. · Applied Physics Letters · 1997 · 61 citations · Full text
Materials Science, Materials Engineering, Epitaxial Growth +12
Co silicide formation on SiGeC/Si and SiGe/Si layers
R. A. Donaton, Karen Maex, A. Vantomme et al. · Applied Physics Letters · 1997 · 61 citations
Materials Engineering, Materials Science, Epitaxial Growth +15
Emission channeling studies of Pr in GaN
U. Wahl, A. Vantomme, G. Langouche et al. · Journal of Applied Physics · 2000 · 52 citations
Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11
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