Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantation

Abstract

Orientation and strain in buried CoSi2 layers have been studied in a Si/CoSi2/Si/CoSi2/Si(111) structure. Using a well defined implantation and annealing procedure, a unique combination of CoSi2 epitaxial layers was obtained having the same strain but an opposite orientation. These novel structures are interesting for epitaxial growth studies and may have important device applications.