Concepedia

Suppression of rare-earth implantation-induced damage in GaN

A. Vantomme, S. Hogg, M. F. Wu, B. Pipeleers, M Swart, S. A. Goodman, Danie Auret, Konstantin Iakoubovskii, G.J. Adriaenssens, K. Jacobs,

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 29 citations · 5 references

Concepts

EngineeringElectrical EngineeringMaterials EngineeringElectronic MaterialsSemiconductor DevicesHigh-frequency Semiconductor DevicesIon ImplantationSemiconductor DefectsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesGallium Nitride (Gan) MaterialsImplantation-induced Defect FormationRadiation-hard Semiconductor Materials

References

5

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

A. J. Steckl, J. M. Zavada · MRS Bulletin · 1999 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14

Materials modification with ion beams

J. S. Williams · Reports on Progress in Physics · 1986 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +14

Damage to epitaxial GaN layers by silicon implantation

Hark Hoe Tan, J. S. Williams, Jin Zou et al. · Applied Physics Letters · 1996 · 129 citations

Engineering, Materials Engineering, Materials Science +16

GaN and Related Materials for Device Applications

S. J. Pearton, Chihping Kuo · MRS Bulletin · 1997 · 78 citations

Engineering, Materials Engineering, Materials Science +14

Importance of channeled implantation to the synthesis of erbium silicide layers

M. F. Wu, A. Vantomme, H. Pattyn et al. · Applied Physics Letters · 1995 · 28 citations

Engineering, Materials Engineering, Materials Science +15