J. M. Zavada

Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

A. J. Steckl, J. M. Zavada · MRS Bulletin · 1999 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14

First-principles analysis of electron-phonon interactions in graphene

K. M. Borysenko, Jeffrey T. Mullen, Edwin Barry et al. · Physical Review B · 2010 · 227 citations · Full text

Natural Sciences, Materials Science, Physics +17

Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes

H. C. Casey, John F. Muth, S. Krishnankutty et al. · Applied Physics Letters · 1996 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo et al. · Applied Physics Letters · 2003 · 211 citations

Natural Sciences, Materials Science, Physics +15

1.54-μm photoluminescence from Er-implanted GaN and AlN

R. G. Wilson, Robert N. Schwartz, C. R. Abernathy et al. · Applied Physics Letters · 1994 · 200 citations

Natural Sciences, Materials Engineering, Materials Science +17